STD93003 high voltage fast-switching pnp power transistor n reverse pins out vs standard ipak (to-251) / dpak (to-252) packages n medium voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed n surface-mounting dpak (to-252) power package in tape & reel (suffix "t4") n through-hole ipak (to-251) power package in tube (suffix "-1") applications: n electronic ballasts for fluorescent lighting description the device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide rbsoa. the STD93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the std83003, its complementary npn transistor. ? internal schematic diagram october 2002 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) -500 v v ceo collector-emitter voltage (i b = 0) -400 v v ebo emitter-base voltage (i c = 0, i b = -0.75 a, t p < 10 m s, t j < 150 o c) v (br)ebo v i c collector current -1.5 a i cm collector peak current (t p < 5 ms) -3 a i b base current -0.75 a i bm base peak current (t p < 5 ms) -1.5 a p tot total dissipation at t c = 25 o c20w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 3 2 1 ipak to-251 (suffix "-1") 1 3 dpak to-252 (suffix "t4") 1/8
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 6.25 100 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = -500v v ce = -500v t j = 125 o c -1 -5 ma ma v (br)ebo emitter base breakdown voltage (i c = 0) i e = -10 ma -5 -10 v v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = -10 ma l = 25 mh -400 v v ce(sat) * collector-emitter saturation voltage i c = -0.5 a i b = -0.1 a i c = -0.35 a i b = -50 ma -0.5 -0.5 v v v be(sat) * base-emitter saturation voltage i c = -0.5 a i b = -0.1 a -1 v h fe * dc current gain i c = -10 ma v ce = -5 v i c = -0.35 a v ce = -5 v i c = -1 a v ce = -5 v 10 16 4 25 32 t r t s t f resistive load rise time storage time fall time i c = -0.35 a v cc = 125 v i b1 = -70 ma i b2 = 70 ma t p 3 25 m s (see figure 2) 1.5 90 2.2 0.1 2.9 ns m s m s t s t f inductive load storage time fall time i c = -0.5 a i b1 = -0.1 a v be(off) = 5 v l = 10 mh v clamp = 300 v (see figure 1) 400 40 ns ns e sb avalanche energy l = 4 mh c = 1.8 nf i br 2.5 a 25 o c < t c < 125 o c 12 mj * pulsed: pulse duration = 300 m s, duty cycle = 1.5 %. STD93003 2/8
safe operating area dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage STD93003 3/8
resistive fall time resistive storage time inductive fall time inductive storage time reverse biased soa STD93003 4/8
figure 1: inductive load switching test circuit. figure 2: resistive load switching test circuit. 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier 1) fast electronic switch 2) non-inductive resistor STD93003 5/8
dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a3 0.70 1.30 0.028 0.051 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 b3 0.85 0.033 b5 0.30 0.012 b6 0.95 0.037 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.237 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 15.90 16.30 0.626 0.642 l 9.00 9.40 0.354 0.370 l1 0.80 1.20 0.031 0.047 l2 0.80 1.00 0.031 0.039 v1 10 o 10 o p032nr/e to-251 (ipak) mechanical data STD93003 6/8
dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data STD93003 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com STD93003 8/8
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